FDN358P mosfet equivalent, p-channel mosfet.
-1.5 A, -30 V, RDS(ON) = 0.125 Ω @ VGS = -10 V RDS(ON) = 0.20 Ω @ VGS = - 4.5 V. High power version of industry SOT-23 package: identical pin out to SOT-23; 30% higher po.
in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low i.
SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. .
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